Deterministic and stochastic simulations of electron transport in semiconductors
by Martin Galler   Armando Majorana  

Vol. 2 No. 2 (2007) P.349~P.365

ABSTRACT

We present a new numerical scheme based on a shock capturing algorithm combined with a cell average method for solving the non-stationary Boltzmann-Poisson system describing the electron transport in semiconductor devices. The proposed computational technique is applied for investigating the carrier transport in a silicon MOSFET. Hydrodynamical and electrical quantities are shown and compared with data obtained by the Direct Simulation Monte Carlo (DSMC) method. The good agreement between the deterministic and the stochastic approaches validates the proposed numerical scheme, which may represent a useful tool for studying transport phenomena in semiconductors where the DSMC method does not give accurate results.

KEYWORDS
Boltzmann equations, semiconductor, numerical schemes

MATHEMATICAL SUBJECT CLASSIFICATION 2010
Primary: 82D37, 82-08, 65M99

MILESTONES

Received: 2004-11-29
Revised : 2005-06-07
Accepted:

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